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| PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 3.4 x 3.4 MILS Al - 15,000A Au - 18,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (10- April 2006) Central TM PROCESS CPD91V Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (10- April 2006) |
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